ETHER Lab Review on High-Temperature III-Nitride HEMTs Published in Nature Electronics

ETHER Lab Ph.D. student Ethan Liu recently first-authored a review paper published in Nature Electronics entitled, "High-temperature operation of group-III nitride high-electron-mobility transistors". Congratulation Ethan and co-authors (including our collaborators in the Palacios group at MIT) for an excellent and timely review!