Publications

2026

2025

High-Temperature Operation of III-Nitride High Electron Mobility Transistors

Yi-Chen Liu, Jacklyn Zhu, John Niroula, Hridibrata Pal, Tomas Palacios, Savannah Eisner

InAlN/GaN Detectors for Real-Time Dosimetry in Ultra-High Dose Rate FLASH Radiotherapy

S.Y. Choi, C. Anderson, K. Dai, I. Fratelli, Y.-C. Liu, P. Ballentine, Y. Tan, M. Bardash, G. Garty, A. Harken, I. Kymissis, S.R. Eisner

Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions

S.R. Eisner, Z.N. Heussen, S. Cordero, J. Niroula, J. Naphy, M.F. Isamotu, H. Surdi, M. Yuan, Q. Xie, R.J. Nemanich, T. Palacios, M. Rais-Zadeh, G.W. Hunter, D.G. Senesky

Investigation of InAlN/GaN Circular Transistors for Venus and Other High-Temperature Applications

Savannah R Eisner, Yi-Chen Liu, Jared Naphy, Ruiqi Chen, Mina Rais-Zadeh, Debbie G Senesky

2024

Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors

Satish Shetty, Andrian V Kuchuk, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Ayesha Hassan, Savannah R Eisner, Nirosh M Eldose, Dinesh Baral, Yuriy I Mazur, David Huitink, Debbie G Senesky, H Alan Mantooth, Gregory J Salamo

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Q. Xie, J. Niroula, N.S. Rajput, M. Yuan, S. Luo, K. Fu, M.F. Isamotu, R.H. Palash, B. Sikder, S.R. Eisner, H. Surdi, A.J. Belanger, P.K. Darmawi-Iskandar, Z. Aksamija, R.J. Nemanich, S. Goodnick, D.G. Senesky, G.W. Hunter,N. Chowdhury,Y. Zhao,T. Palacios

Temperature, sensitivity, and frequency response of AlN/GaN heterostructure micro-hall effect sensor

Satish Shetty, Savannah R Eisner, Ayesha Hassan, Anand Lalwani, Dinesh Baral, Yuriy I Mazur, Debbie G Senesky, HOH Churchill, Zhong Chen, H Alan Mantooth, Gregory J Salamo

2023

Thermal stability study of gallium nitride based magnetic field sensor

Satish Shetty, Andrian Kuchuk, Mohammad Zamani-Alavijeh, Ayesha Hassan, Savannah R Eisner, Fernando Maia de Oliveira, Alexis Krone, John Harris, Josh P Thompson, Nirosh M Eldose, Yuriy I Mazur, David Huitink, Debbie G Senesky, H Alan Mantooth, G.J. Salamo

Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures

Savannah R Eisner, Debbie G Senesky

Enhancement-mode GaN transistor technology for harsh environment operation

Mengyang Yuan, John Niroula, Qingyun Xie, Nitul S Rajput, Kai Fu, Shisong Luo, Sagar Kumar Das, Abdullah Jubair Bin Iqbal, Bejoy Sikder, Mohamed Fadil Isamotu, Minsik Oh, Savannah R Eisner, Debbie G Senesky, G.W. Hunter, N.Chowdhury, Y.Zhao, T. Palacios

2022

InAlN/GaN High Electron Mobility Transistors for Venus Surface Exploration

Savannah R Eisner

2021

Hall-effect sensor technique for no induced voltage in AC magnetic field measurements without current spinning

Anand Vikas Lalwani, Ananth Saran Yalamarthy, Hannah S Alpert, Maximillian Holliday, Savannah R Eisner, Caitlin A Chapin, Debbie G Senesky

Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment

Savannah R Eisner, Hannah S Alpert, Caitlin A Chapin, Ananth Saran Yalamarthy, Peter F Satterthwaite, Ardalan Nasiri, Sara Port, Simon Ang, Debbie G Senesky

2020

A laterally vibrating lithium niobate MEMS resonator array operating at 500° C in air

Savannah R Eisner, Cailin A Chapin, Ruochen Lu, Yansong Yang, Songbin Gong, Debbie G Senesky

Low offset and noise in high biased GaN 2DEG Hall-effect plates investigated with infrared microscopy

Karen M Dowling, Tanya Liu, Hannah S Alpert, Caitlin A Chapin, Savannah R Eisner, Ananth Saran Yalamarthy, Peter F Satterthwaite, Helmut Köck, Udo Ausserlechner, Mehdi Asheghi, Kenneth E Goodson, Debbie G Senesky

Ultra-high-Q gallium nitride SAW resonators for applications with extreme temperature swings

Afzaal Qamar, Savannah R Eisner, Debbie G Senesky, Mina Rais-Zadeh

Sensitivity of 2DEG-based Hall-effect sensors at high temperatures

Hannah S Alpert, Caitlin A Chapin, Karen M Dowling, Savannah R Benbrook, Helmut Köck, Udo Ausserlechner, Debbie G Senesky

2019

Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300° C

Caitlin A Chapin, Savannah R Benbrook, Chloe Leblanc, Debbie G Senesky

Graphene as a Diffusion Barrier in High-Temperature Electronics

Laura Brandt, Ananth Saran Yalamarthy, Peter Satterthwaite, Sam Vaziri, Savannah Benbrook, Eric Pop, Debbie Senesky

Effect of geometry on sensitivity and offset of AlGaN/GaN and InAlN/GaN Hall-effect sensors

Hannah S Alpert, Karen M Dowling, Caitlin A Chapin, Ananth Saran Yalamarthy, Savannah R Benbrook, Helmut Köck, Udo Ausserlechner, Debbie G Senesky

2017

Control Device Thermal Modeling in MRI Receive Coil Q-Spoiling Circuits

Robert H Caverly, Savannah Benbrook

Thermal modeling of Q-spoil switching elements for MRI coils

Robert H Caverly, Savannah Benbrook

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    Columbia Affiliations
    Department of Electrical Engineering